Invention Grant
- Patent Title: High speed ESP protection circuit
-
Application No.: US17014894Application Date: 2020-09-08
-
Publication No.: US11322935B2Publication Date: 2022-05-03
- Inventor: Farzan Farbiz , Jaeduk Han , Praveen R. Singh
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Kowert, Hood, Munyon, Rankin & Goetzel, P.C.
- Agent Erik A. Heter
- Main IPC: H02H9/04
- IPC: H02H9/04

Abstract:
An ESD protection circuit is disclosed. The ESD protection circuit is coupled between a first node and a second node that is coupled to an input of a functional circuit. A first protection circuit is coupled to the first node. The circuit further includes a first path and a second path. The first path includes a second protection circuit that is coupled to the second node, and is AC coupled to the first node. A second circuit path includes a third protection circuit, a resistor coupled between the third protection circuit and the first node, and a switch having a first terminal coupled to the resistor and the third protection circuit. A shunt circuit includes a transistor having a gate terminal coupled to the second terminal of the switch. The transistor, when activated, shunts current from the second node to ground.
Public/Granted literature
- US20220077679A1 High Speed ESD Protection Circuit Public/Granted day:2022-03-10
Information query