Invention Grant
- Patent Title: Filter using piezoelectric film bonded to high resistivity silicon substrate with trap-rich layer
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Application No.: US16989710Application Date: 2020-08-10
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Publication No.: US11323089B2Publication Date: 2022-05-03
- Inventor: Patrick Turner
- Applicant: Resonant Inc.
- Applicant Address: US CA Goleta
- Assignee: Resonant Inc.
- Current Assignee: Resonant Inc.
- Current Assignee Address: US CA Goleta
- Agency: SoCal IP Law Group LLP
- Agent Angelo J. Gaz
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H03H9/54 ; H03H9/205

Abstract:
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a trap-rich region adjacent to a surface and a single-crystal piezoelectric plate having parallel front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The single-crystal piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the diaphragm.
Public/Granted literature
- US20200373903A1 FILTER USING PIEZOELECTRIC FILM BONDED TO HIGH RESISTIVITY SILICON SUBSTRATE WITH TRAP-RICH LAYER Public/Granted day:2020-11-26
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