A double-side polishing method, including: simultaneously polishing both surfaces of a semiconductor wafer by holding the semiconductor wafer in a carrier, interposing the held semiconductor wafer between an upper turn table and a lower turn table each having a polishing pad attached thereto, and bringing both surfaces of the semiconductor wafer into sliding contact with the polishing pads, wherein the semiconductor wafer is polished under a condition that a thickness A (mm) of the polishing pad attached to the upper turn table and a thickness B (mm) of the polishing pad attached to the lower turn table satisfy relations of 1.0≤A+B≤2.0 and A/B>1.0. This provides a double-side polishing method capable of obtaining a semiconductor wafer in which F-ZDD