Invention Grant
- Patent Title: Method to optimize atomic layer deposition
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Application No.: US16801225Application Date: 2020-02-26
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Publication No.: US11326033B2Publication Date: 2022-05-10
- Inventor: Shih-Chieh Teng , Ju-Hui Huang
- Applicant: BenQ Materials Corporation
- Applicant Address: TW Taoyuan
- Assignee: BenQ Materials Corporation
- Current Assignee: BenQ Materials Corporation
- Current Assignee Address: TW Taoyuan
- Priority: TW108146690 20191219
- Main IPC: H01L23/29
- IPC: H01L23/29 ; C08J7/048 ; C08J7/04 ; C23C16/455 ; C23C16/40 ; H01L33/56

Abstract:
The disclosure provides a method to optimize atomic layer deposition comprising the following steps: (A) providing a cellulose nanofiber; (B) acidifying the cellulose nanofiber by an acidifying treatment agent; (C) hydrophobing the acidified cellulose nanofiber by a hydrophobinghydrophobic treatment agent; (D) dissolving the acidified and hydrophobed cellulose nanofiber in a solvent to form a cellulose nanofiber solution; (E) coating the cellulose nanofiber solution on a silicone resin film; (F) heating the coated silicone resin film to form a cellulose nanofiber layer on a surface of the silicone resin film; and (G) forming an inorganic coating layer on the surface of the silicone resin film having the cellulose nanofiber layer by atomic layer deposition.
Public/Granted literature
- US20210189081A1 METHOD TO OPTIMIZE ATOMIC LAYER DEPOSITION Public/Granted day:2021-06-24
Information query
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