Invention Grant
- Patent Title: Polycrystalline silicon manufacturing apparatus
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Application No.: US16795039Application Date: 2020-02-19
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Publication No.: US11326257B2Publication Date: 2022-05-10
- Inventor: Naruhiro Hoshino , Tetsuro Okada , Masahiko Ishida
- Applicant: Shin-Etsu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee: Shin-Etsu Chemical Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: WHDA, LLP
- Priority: JPJP2019-027952 20190220
- Main IPC: C23C16/46
- IPC: C23C16/46 ; C23C16/24
Abstract:
An integrated sleeve structure is provided between an electrode configured to feed power to a silicon core wire and a bottom plate part. Sealing members are arranged on at least part of a flange part of an insulating member and on at least part of a straight part of the insulating member.
Public/Granted literature
- US20200263304A1 POLYCRYSTALLINE SILICON MANUFACTURING APPARATUS Public/Granted day:2020-08-20
Information query
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