Invention Grant
- Patent Title: Semiconductor device for stable control of power-down mode
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Application No.: US17150745Application Date: 2021-01-15
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Publication No.: US11328751B2Publication Date: 2022-05-10
- Inventor: Woongrae Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2020-0117661 20200914
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A semiconductor device includes: a first buffer circuit configured to receive a chip select signal in a power-down mode in response to a first select signal, a second buffer circuit configured to receive the chip select signal in an active mode in response to the first select signal, a power supply circuit configured to supply external power to a plurality of logic elements in the active mode in response to a second select signal, and not supply the external power to the plurality of logic elements in the power-down mode, and a select control circuit configured to transition a logic level of the second select signal at a first edge of a first chip select signal in the power-down mode, and then transition a logic level of the first select signal at a following second edge of the first chip select signal to exit from the power-down mode and enter the active mode.
Public/Granted literature
- US20220084562A1 SEMICONDUCTOR DEVICE FOR STABLE CONTROL OF POWER-DOWN MODE Public/Granted day:2022-03-17
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