- Patent Title: Memory device comprising an electrically floating body transistor
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Application No.: US17160713Application Date: 2021-01-28
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Publication No.: US11328765B2Publication Date: 2022-05-10
- Inventor: Jin-Woo Han , Yuniarto Widjaja
- Applicant: Zeno Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Law Office of Alan W. Cannon
- Main IPC: G11C11/417
- IPC: G11C11/417 ; G11C15/04 ; G11C11/404 ; G11C11/4091 ; G11C11/412 ; H01L27/108
Abstract:
A memory cell comprising includes a silicon-on-insulator (SOI) substrate, an electrically floating body transistor fabricated on the silicon-on-insulator (SOI) substrate, and a charge injector region. The floating body transistor is configured to have more than one stable state through an application of a bias on the charge injector region.
Public/Granted literature
- US20210151097A1 Memory Device Comprising An Electrically Floating Body Transistor Public/Granted day:2021-05-20
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