A degassing chamber and a semiconductor processing apparatus are provided. The degassing chamber includes a chamber; a substrate container, movable within the chamber in a vertical direction; and a heating component, disposed within the chamber. A substrate transferring opening is formed through a sidewall of the chamber for transferring substrates into or out of the chamber. The heating component includes a first light source component and a second light source component. The chamber is divided into a first chamber and a second chamber by the substrate transferring opening. The first light source component is located in the first chamber, and the second light source component is located in the second chamber. The first light source component and the second light source component are provided for heating a substrate in the substrate container.