Invention Grant
- Patent Title: Semiconductor device having planar transistor and FinFET
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Application No.: US17079052Application Date: 2020-10-23
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Publication No.: US11328958B2Publication Date: 2022-05-10
- Inventor: Wei-Barn Chen , Ting-Huang Kuo , Shiu-Ko Jangjian , Chi-Cherng Jeng , Kuang-Yao Lo
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L21/308 ; H01L21/265 ; H01L27/088 ; H01L29/08
Abstract:
A device includes first and second transistors and first and second isolation structures. The first transistor includes a raised structure, a first gate structure over the raised structure, and a first source/drain structure over the raised structure and adjacent the first gate structure. The first isolation structure surrounds the raised structure and the first source/drain structure of the first transistor. A bottommost surface of the first source/drain structure is spaced apart from a topmost surface of the first isolation structure. The second transistor includes a fin structure, a second gate structure over the raised structure, and a second source/drain structure over the fin structure. The second isolation structure surrounds a bottom of the fin structure of the second transistor. A bottommost surface of the second source/drain structure is in contact with a topmost surface of the second isolation structure.
Public/Granted literature
- US20210043517A1 SEMICONDUCTOR DEVICE HAVING PLANAR TRANSISTOR AND FINFET Public/Granted day:2021-02-11
Information query
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