Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
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Application No.: US17022737Application Date: 2020-09-16
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Publication No.: US11328998B2Publication Date: 2022-05-10
- Inventor: Shinji Wakisaka
- Applicant: AOI Electronics Co., Ltd.
- Applicant Address: JP Takamatsu
- Assignee: AOI Electronics Co., Ltd.
- Current Assignee: AOI Electronics Co., Ltd.
- Current Assignee Address: JP Takamatsu
- Agency: Crowell & Moring LLP
- Priority: JPJP2019-168637 20190917
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/56 ; H01L29/40 ; H01L29/06 ; H01L25/00 ; H01L23/00 ; H01L21/768 ; H01L25/16
Abstract:
A semiconductor device includes: a first semiconductor element having a first electrode on a main surface side thereof and a second electrode on a back surface side thereof; a base material provided with a connection conductor connected to the first electrode; a sealing resin provided on the base material to seal the first semiconductor element; and a first via provided in the sealing resin and electrically connected to the second electrode of the first semiconductor element.
Public/Granted literature
- US20210082820A1 Semiconductor Device and Manufacturing Method of Semiconductor Device Public/Granted day:2021-03-18
Information query
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