A field effect transistor structure includes a connection hole leading out a gate structure arranged on the formation area of one of a plurality of fins, and connection holes leading out a source electrode and a drain electrode, wherein the connection hole leading out the gate structure is located on formation areas of different fins; a gate cap layer formed at the top of the gate structure formed on the same fin body and adjacent to the connection holes leading out the source electrode and the drain electrode, wherein the gate cap layer protects the corresponding gate structure; buried holes formed on the source electrode and the drain electrode at both sides of the connection hole leading out the gate structure; a buried hole cap layer formed on the buried holes, and the buried hole cap layer protects the buried holes connecting the source and the drain electrode.