Invention Grant
- Patent Title: Method for manufacturing laterally diffused metal oxide semiconductor device and semiconductor device
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Application No.: US16415057Application Date: 2019-05-17
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Publication No.: US11329153B2Publication Date: 2022-05-10
- Inventor: Budong You , Meng Wang , Hui Yu , Yicheng Du , Chuan Peng
- Applicant: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Applicant Address: CN Zhejiang
- Assignee: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Current Assignee: SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Current Assignee Address: CN Zhejiang
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: CN201810515878.7 20180525
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/765 ; H01L29/10 ; H01L29/40 ; H01L29/66
Abstract:
A method for manufacturing a laterally diffused metal oxide semiconductor device and a semiconductor device are provided. A body region is formed before forming a gate dielectric layer and a gate conductor, thereby reducing a channel length of the semiconductor device, thus reducing the on-resistance. In addition, a drift region serves as both a region withstanding a high voltage and a diffusion suppression region for suppressing lateral diffusion of the body region, thereby further reducing the channel length of the semiconductor device, thus manufacturing a short-channel semiconductor device.
Information query
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