Invention Grant
- Patent Title: Optoelectronic device manufacturing method
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Application No.: US16991857Application Date: 2020-08-12
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Publication No.: US11329188B2Publication Date: 2022-05-10
- Inventor: Lamine Benaissa , Marc Rabarot
- Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee Address: FR Paris
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR1909238 20190816
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A method of manufacturing electronic devices, including the successive steps of: a) growing, on a surface of a first substrate, a stack including at least one semiconductor layer; b) bonding a second substrate on a surface of the stack opposite to the first substrate, and then removing the first substrate; c) bonding a third substrate to a surface of the stack opposite to the second substrate, and then removing the second substrate; d) cutting the assembly including the third substrate and the stack into a plurality of first chips each including a portion of the stack; and e) bonding each first chip, by its surface opposite to the third substrate, to a surface of a fourth semiconductor substrate inside and on top of which a plurality of integrated control circuits have been previously formed.
Public/Granted literature
- US20210050476A1 OPTOELECTRONIC DEVICE MANUFACTURING METHOD Public/Granted day:2021-02-18
Information query
IPC分类: