Invention Grant
- Patent Title: Optoelectronic device with wavelenghth coversion material in hollow structure for blue light leakage rate reduction
-
Application No.: US16911847Application Date: 2020-06-25
-
Publication No.: US11329200B2Publication Date: 2022-05-10
- Inventor: Kunbin Lin , Shaofeng Zhang
- Applicant: KAISTAR Lighting (Xiamen) Co., Ltd.
- Applicant Address: CN Xiamen
- Assignee: KAISTAR Lighting (Xiamen) Co., Ltd.
- Current Assignee: KAISTAR Lighting (Xiamen) Co., Ltd.
- Current Assignee Address: CN Xiamen
- Agency: Hemisphere Law, PLLC
- Agent Zhigang Ma
- Priority: CN201910601783.1 20190705
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L27/15 ; H01L33/58

Abstract:
An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a transparent substrate, an optoelectronic chip, electrodes and a wavelength conversion layer. The transparent substrate is provided with a hollow structure and an installation area, the hollow structure penetrates through two opposite surfaces of the transparent substrate and is located at a periphery of the installation area. The optoelectronic chip is arranged in the installation area. The electrodes are arranged on the transparent substrate and electrically connected to the optoelectronic chip; and the wavelength conversion layer is arranged on the two opposite surfaces of the transparent substrate and filled in the hollow structure, wherein the optoelectronic chip is covered by the wavelength conversion layer. The effect of reducing leakage rate of blue light of an optoelectronic device such as a LED packaging structure can be achieved.
Public/Granted literature
- US20210005792A1 OPTOELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-01-07
Information query
IPC分类: