Invention Grant
- Patent Title: Micro light emitting diode and manufacturing method of micro light emitting diode
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Application No.: US16724776Application Date: 2019-12-23
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Publication No.: US11329204B2Publication Date: 2022-05-10
- Inventor: Shunsuke Kimura , Sungtae Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2018-0168726 20181224
- Main IPC: H01L33/60
- IPC: H01L33/60 ; H01L33/00 ; H01L25/075 ; H01L33/38 ; H01L33/44 ; H01L33/62 ; H01L33/46 ; H01L33/20

Abstract:
A micro light emitting diode (LED), including a first semiconductor layer doped with an n-type dopant; a second semiconductor layer doped with a p-type dopant; an active layer arranged between the first semiconductor layer and the second semiconductor layer, and configured to provide light; a first side surface including a vertical side surface of the first semiconductor layer; a second side surface tilted with respect to the first side surface, and including a first tilted side surface of the active layer and a second tilted side surface of the second semiconductor layer; an insulating layer arranged to surround the first side surface and the second side surface; and a reflective layer arranged to partially surround the insulating layer in an area of the insulating layer corresponding to the second side surface.
Information query
IPC分类: