Invention Grant
- Patent Title: Diffusion barrier structure, and conductive laminate and manufacturing method thereof
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Application No.: US16510208Application Date: 2019-07-12
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Publication No.: US11331883B2Publication Date: 2022-05-17
- Inventor: Tzu-Chien Wei , Wei-Yen Wang
- Applicant: National Tsing Hua University
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: Li & Cai Intellectual Property (USA) Office
- Priority: TW107134388 20180928
- Main IPC: B32B15/20
- IPC: B32B15/20 ; B32B3/10 ; B32B15/082 ; B32B27/30 ; B32B7/12 ; H01L21/768 ; B32B27/28

Abstract:
A diffusion barrier structure, and a conductive laminate and a manufacturing method thereof are provided. The conductive laminate includes a substrate, a diffusion barrier structure, and a conductive layer. The diffusion barrier structure is formed between the substrate and the conductive layer. The diffusion barrier structure includes a discontinuous modifying layer and a barrier layer. The discontinuous modifying layer is disposed on the substrate. A material for composing the discontinuous modifying layer is a polymer with hydrophilic group. The barrier layer is disposed on the substrate and the discontinuous modifying layer. A material for composing the barrier layer includes at least one self-healing polymer.
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