Invention Grant
- Patent Title: Semiconductor nanoparticles, method of producing semiconductor nanoparticles, and light-emitting device
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Application No.: US17097516Application Date: 2020-11-13
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Publication No.: US11332663B2Publication Date: 2022-05-17
- Inventor: Tsukasa Torimoto , Tatsuya Kameyama , Marino Kishi , Susumu Kuwabata , Taro Uematsu , Daisuke Oyamatsu
- Applicant: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION and RESEARCH SYSTEM , OSAKA UNIVERSITY , NICHIA CORPORATION
- Applicant Address: JP Nagoya; JP Suita; JP Anan
- Assignee: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION and RESEARCH SYSTEM,OSAKA UNIVERSITY,NICHIA CORPORATION
- Current Assignee: NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION and RESEARCH SYSTEM,OSAKA UNIVERSITY,NICHIA CORPORATION
- Current Assignee Address: JP Nagoya; JP Suita; JP Anan
- Agency: Hunton Andrews Kurth LLP
- Priority: JP2016-173446 20160906,JP2017-034613 20170227
- Main IPC: C09K11/62
- IPC: C09K11/62 ; H01L33/50 ; B82Y40/00 ; B82Y20/00

Abstract:
Provided is a ternary or quaternary semiconductor nanoparticle that enables the band-edge emission and a less toxic composition. A semiconductor nanoparticle is provided that contains Ag, In, and S and has an average particle size of 50 nm or less, wherein the ratio of the number of atoms of Ag to the total number of atoms of Ag and In is 0.320 or more and 0.385 or less, the ratio of the number of atoms of S to the total number of atoms of Ag and In is 1.20 or more and 1.45 or less. The semiconductor nanoparticle is adapted to emit photoluminescence having a photoluminescence lifetime of 200 ns or less upon being irradiated with light having a wavelength in a range of 350 nm to 500 nm.
Public/Granted literature
- US20210062083A1 SEMICONDUCTOR NANOPARTICLES, METHOD OF PRODUING SEMICONDUCTOR NANOPARTICLES, AND LIGHT-EMITTING DEVICE Public/Granted day:2021-03-04
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