Invention Grant
- Patent Title: Semiconductor device performing refresh operation in deep sleep mode
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Application No.: US17173048Application Date: 2021-02-10
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Publication No.: US11335393B2Publication Date: 2022-05-17
- Inventor: Yoshiro Riho , Yoshinori Matsui , Kiyohiro Furutani , Takahiko Fukiage , Ki-Jun Nam , John D. Porter
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C11/4076 ; G11C11/408

Abstract:
Disclosed herein is an apparatus that includes a memory cell array including a plurality of memory cells, a first counter circuit configured to periodically update a count value during a first operation mode, a burst clock generator configured to successively generate a burst pulse predetermined times when the count value indicates a predetermined value, and a row address control circuit configured to perform a refresh operation on the memory cell array in response to the burst pulse.
Public/Granted literature
- US20210166753A1 SEMICONDUCTOR DEVICE PERFORMING REFRESH OPERATION IN DEEP SLEEP MODE Public/Granted day:2021-06-03
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