Invention Grant
- Patent Title: Computing-in-memory chip and memory cell array structure
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Application No.: US17160292Application Date: 2021-01-27
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Publication No.: US11335400B2Publication Date: 2022-05-17
- Inventor: Shaodi Wang
- Applicant: Beijing Zhicun (Witin) Technology Corporation Ltd.
- Applicant Address: CN Beijing
- Assignee: Beijing Zhicun (Witin) Technology Corporation Ltd.
- Current Assignee: Beijing Zhicun (Witin) Technology Corporation Ltd.
- Current Assignee Address: CN Beijing
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/24 ; G11C29/04 ; G11C13/00 ; G06F17/16

Abstract:
In a computing-in-memory chip and a memory cell array structure, a memory cell array therein includes a plurality of memory cell sub-arrays arranged in an array. Each memory cell sub-array comprises a plurality of switch units and a plurality of memory cells arranged in an array; and first terminals of all memory cells in each column are connected to a source line, second terminals of all the memory cells are connected to a bit line, third terminals of all memory cells in each row are connected to a word line through a switch unit, a plurality of rows of memory cells are correspondingly connected to a plurality of switch units, control terminals of the plurality of switch units are connected to a local word line of the memory cell sub-array, and whether to activate the memory cell sub-array is controlled by controlling the local word line.
Public/Granted literature
- US20210151106A1 Computing-in-Memory Chip and Memory Cell Array Structure Public/Granted day:2021-05-20
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