Invention Grant
- Patent Title: Method of determining read reference voltage for blocks based on number of erroneous bits
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Application No.: US16858256Application Date: 2020-04-24
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Publication No.: US11335414B2Publication Date: 2022-05-17
- Inventor: Tao Wei , Zhengtian Feng , Ke Wei
- Applicant: INNOGRIT TECHNOLOGIES CO., LTD
- Applicant Address: CN Shanghai
- Assignee: INNOGRIT TECHNOLOGIES CO., LTD
- Current Assignee: INNOGRIT TECHNOLOGIES CO., LTD
- Current Assignee Address: CN Shanghai
- Agency: Womble Bond Dickinson (US) LLP
- Priority: CN201910645148.3 20190717
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C16/28 ; G11C16/34 ; G01R19/165 ; G11C16/26 ; G11C29/02 ; G11C11/56

Abstract:
A method and apparatus for determining a reference voltage id disclosed. The method may include: reading data from a first flash memory page by using different reference voltages, and taking, as a first target reference voltage, one of the different reference voltages at which the first number of erroneous bits of the data that is read reaches a converegence value. The first flash memory page is any one of multiple flash memory pages of a flash memory block to be tested. The method may include adjusting the first target reference voltage to obtain second target reference voltages; and reading data from the flash memory pages by using the second target referece voltages, and taking, as a target reference voltage, one of the second target reference voltages at which the second number of erroneous bits of the data that is read is the smallest.
Public/Granted literature
- US20210020251A1 METHOD AND APPARATUS FOR DETERMINING A REFERENCE VOLTAGE Public/Granted day:2021-01-21
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