Invention Grant
- Patent Title: Multi-deposition process for high quality gallium nitride device manufacturing
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Application No.: US16862255Application Date: 2020-04-29
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Publication No.: US11335557B2Publication Date: 2022-05-17
- Inventor: Vladimir Odnoblyudov , Cem Basceri
- Applicant: QROMIS, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: QROMIS, Inc.
- Current Assignee: QROMIS, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C30B25/02 ; H01L29/20 ; H01L23/00 ; C30B29/40 ; C30B29/68 ; H01L21/78 ; H01L21/205
Abstract:
A group III-nitride (III-N)-based electronic device includes an engineered substrate, a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate, and a hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer.
Public/Granted literature
- US20200258741A1 MULTI-DEPOSITION PROCESS FOR HIGH QUALITY GALLIUM NITRIDE DEVICE MANUFACTURING Public/Granted day:2020-08-13
Information query
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