Invention Grant
- Patent Title: Strained semiconductor device with improved NBTI and a method of making the same
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Application No.: US16856981Application Date: 2020-04-23
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Publication No.: US11335605B2Publication Date: 2022-05-17
- Inventor: Runling Li , Yanwei Zhang
- Applicant: SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
- Current Assignee: SHANGHAI HUALI INTEGRATED CIRCUIT CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Alston & Bird LLP
- Priority: CN201911163029.0 20191125
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/49 ; H01L29/78
Abstract:
A method of forming a strained semiconductor device includes: forming a substrate and a MOS device on the substrate; depositing a molecular plug film structure on the MOS device, The molecular plug film structure includes at least one molecular plug film, depositing a stress film on the molecular plug film structure, and performing an annealing process. The stress applied to the MOS device by the stress film is increased by the annealing process. The structure made by the method includes: a MOS device formed on a substrate, a molecular plug film structure formed on the MOS device, the molecular plug film structure includes at least one molecular plug film, and a stress film formed on the molecular plug film structure.
Public/Granted literature
- US20210159125A1 STRAINED SEMICONDUCTOR DEVICE WITH IMPROVED NBTI AND A METHOD OF MAKING THE SAME Public/Granted day:2021-05-27
Information query
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