Invention Grant
- Patent Title: Substrate structure including embedded semiconductor device and method of manufacturing the same
-
Application No.: US16814704Application Date: 2020-03-10
-
Publication No.: US11335646B2Publication Date: 2022-05-17
- Inventor: Chien-Fan Chen , Yu-Ju Liao
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/31 ; H01L23/538 ; H01L21/56 ; H01L21/48

Abstract:
The present disclosure provides a substrate structure. The substrate structure includes an interconnection structure, a dielectric layer on the interconnection structure, an electronic component embedded in the dielectric layer, and a first conductive via penetrating through the dielectric layer and disposed adjacent to the electronic component. The interconnection structure includes a carrier having a first surface and a second surface opposite to the first surface, a first conductive layer disposed on the first surface of the carrier, and a second conductive layer disposed on the second surface of the carrier. The first conductive via and at least one of the first conductive layer and the second conductive layer define a first shielding structure surrounding the electronic component. A method of manufacturing a substrate structure is also disclosed.
Public/Granted literature
- US20210287997A1 SUBSTRATE STRUCTURE INCLUDING EMBEDDED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-09-16
Information query
IPC分类: