Invention Grant
- Patent Title: Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices
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Application No.: US16118064Application Date: 2018-08-30
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Publication No.: US11335788B2Publication Date: 2022-05-17
- Inventor: Durai Vishak Nirmal Ramaswamy , Ramanathan Gandhi , Scott E. Sills
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/8254 ; H01L49/02 ; H01L29/45 ; H01L29/786 ; H01L29/66 ; H01L29/423 ; H01L29/78
Abstract:
A semiconductor device is disclosed. The semiconductor device includes a transistor including a source contact, a drain contact, and a channel region including an oxide semiconductor material as the channel material. At least one of the drain contact or the source contact includes a conductive material, such as ruthenium, to reduce the Schottky effects at the interface with the channel material.
Public/Granted literature
- US20190067437A1 SEMICONDUCTOR DEVICES, TRANSISTORS, AND RELATED METHODS FOR CONTACTING METAL OXIDE SEMICONDUCTOR DEVICES Public/Granted day:2019-02-28
Information query
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