Invention Grant
- Patent Title: Reverse-conducting IGBT and manufacturing method thereof
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Application No.: US16693369Application Date: 2019-11-24
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Publication No.: US11335795B2Publication Date: 2022-05-17
- Inventor: Kaname Mitsuzuka , Misaki Takahashi , Tohru Shirakawa
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JPJP2017-239503 20171214
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/08 ; H01L29/66 ; H01L29/861 ; H01L21/225 ; H01L21/265 ; H01L21/266
Abstract:
To provide a semiconductor device having excellent conduction characteristics of a transistor portion and a diode portion. The semiconductor device having a transistor portion and a diode portion, the semiconductor device includes: a drift region of a first conductivity type provided on a semiconductor substrate, a first well region of a second conductivity type provided on an upper surface side of the semiconductor substrate, an anode region of the second conductivity provided on the upper surface side of the semiconductor substrate, in the diode portion, and a first high concentration region of a second conductivity type which is provided in contact with a first well region between the anode region and the first well region, and has a higher doping concentration than the anode region.
Public/Granted literature
- US20200091329A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-03-19
Information query
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