Invention Grant
- Patent Title: Method for preparing film bulk acoustic wave device by using film transfer technology
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Application No.: US17279847Application Date: 2017-07-10
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Publication No.: US11336250B2Publication Date: 2022-05-17
- Inventor: Xin Ou , Kai Huang , Qi Jia , Shibin Zhang , Tiangui You , Xi Wang
- Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
- Current Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCES
- Current Assignee Address: CN Shanghai
- Agency: Global IP Services
- Agent Tianhua Gu
- Priority: CN201610527875.6 20160706
- International Application: PCT/CN2017/092396 WO 20170710
- International Announcement: WO2018/006883 WO 20180111
- Main IPC: H03H3/02
- IPC: H03H3/02 ; H03H9/17

Abstract:
A method for preparing a film bulk acoustic wave device by using a film transfer technology includes: 1) providing an oxide monocrystal substrate; 2) implanting ions from the implantation surface into the oxide monocrystal substrate, and then forming a lower electrode on the implantation surface; or vice versa; and forming a defect layer at the preset depth; 3) providing a support substrate and bonding a structure obtained in step 2) with the support substrate; 4) removing part of the oxide monocrystal substrate along the defect layer so as to obtain an oxide monocrystal film, and transferring the obtained oxide monocrystal film and the lower electrode to the support substrate; 5) etching the support substrate from a bottom of the support substrate to form a cavity; 6) forming an upper electrode on the surface of the oxide monocrystal film.
Public/Granted literature
- US20220038070A1 METHOD FOR PREPARING FILM BULK ACOUSTIC WAVE DEVICE BY USING FILM TRANSFER TECHNOLOGY Public/Granted day:2022-02-03
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