Invention Grant
- Patent Title: Magnetron sputtering scanning method for modifying silicon carbide optical reflector surface and improving surface profile
-
Application No.: US16757819Application Date: 2018-03-30
-
Publication No.: US11339468B2Publication Date: 2022-05-24
- Inventor: Jinfeng Wang , Meng Huang , Jie Tian , Yeru Wang
- Applicant: Nanjing Institute of Astronomical Optics & Technology, National Astornomical Observatories, Chinese Academy of Sciences
- Applicant Address: CN Jiangsu
- Assignee: Nanjing Institute of Astronomical Optics & Technology, National Astornomical Observatories, Chinese Academy of Sciences
- Current Assignee: Nanjing Institute of Astronomical Optics & Technology, National Astornomical Observatories, Chinese Academy of Sciences
- Current Assignee Address: CN Jiangsu
- Agency: Rankin, Hill & Clark LLP
- Priority: CN201810144019.1 20180212
- International Application: PCT/CN2018/081213 WO 20180330
- International Announcement: WO2019/153462 WO 20190815
- Main IPC: C23C14/35
- IPC: C23C14/35 ; C23C14/02 ; C23C14/14 ; G02B1/10

Abstract:
A magnetron sputtering scanning method for manufacturing a silicon carbide optical reflector surface modification layer and improving surface profile includes (1) for a silicon carbide plane mirror to be modified, first utilizing diamond micro-powders to grind and roughly polish an aspherical silicon carbide reflector with a conventional polishing or CCOS numerical control machining method; (2) after the surface profile precision of the silicon carbide reflector satisfies a modification requirement, utilizing a strip-shaped magnetron sputtering source to deposit a compact silicon modification layer on the surface of the silicon carbide reflector; (3) then, utilizing a circular sputtering source to modify and improve the surface profile of the reflector; and (4) finally, finely polishing the modification layer, and achieving the requirements for machining the surface profile and roughness of the reflector.
Public/Granted literature
Information query
IPC分类: