Invention Grant
- Patent Title: Target control in extreme ultraviolet lithography systems using aberration of reflection image
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Application No.: US16926489Application Date: 2020-07-10
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Publication No.: US11340531B2Publication Date: 2022-05-24
- Inventor: Ting-Ya Cheng , Han-Lung Chang , Shi-Han Shann , Li-Jui Chen , Yen-Shuo Su
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H05G2/00 ; G02B7/182
Abstract:
A method of controlling an extreme ultraviolet (EUV) lithography system is disclosed. The method includes irradiating a target droplet with EUV radiation, detecting EUV radiation reflected by the target droplet, determining aberration of the detected EUV radiation, determining a Zernike polynomial corresponding to the aberration, and performing a corrective action to reduce a shift in Zernike coefficients of the Zernike polynomial.
Public/Granted literature
- US20220011675A1 TARGET CONTROL IN EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEMS USING ABERRATION OF REFLECTION IMAGE Public/Granted day:2022-01-13
Information query
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