Techniques are provided for atomic writes for persistent memory. In response to receiving a write operation, a new per-page structure with a new page block number is allocated. New data of the write operation is persisted to a new page of the persistent memory having the new page block number, and the new per-page structure is persisted to the persistent memory. If the write operation targets a hole after the new data and the new per-page structure have been persisted, then a new per-page structure identifier of the new per-page structure is inserted into a parent indirect page of a page comprising the new data. If the write operation targets old data after the new data and the new per-page structure have been persisted, then an old per-page structure of the old data is updated with the new page block number.