Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17033925Application Date: 2020-09-28
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Publication No.: US11342186B2Publication Date: 2022-05-24
- Inventor: Yasunori Agata , Takashi Yoshimura , Hiroshi Takishita , Misaki Meguro , Naoko Kodama , Yoshihiro Ikura , Seiji Noguchi , Yuichi Harada , Yosuke Sakurai
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JPJP2018-196766 20181018,JPJP2018-248523 20181228,JPJP2019-159499 20190902
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/66 ; H01L29/739 ; H01L29/06 ; H01L21/22 ; H01L21/265 ; H01L21/268 ; H01L27/06 ; H01L29/32 ; H01L29/40 ; H01L29/861
Abstract:
A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided.
Public/Granted literature
- US20210082702A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-03-18
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