Invention Grant
- Patent Title: Wafer inspection apparatus and wafer inspection method
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Application No.: US16981769Application Date: 2018-05-30
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Publication No.: US11342211B2Publication Date: 2022-05-24
- Inventor: Akira Doi , Minoru Sasaki , Masaki Hasegawa , Hironori Ogawa , Tomohiko Ogata , Yuko Okada
- Applicant: HITACHI HIGH-TECH CORPORATION
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee: HITACHI HIGH-TECH CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- International Application: PCT/JP2018/020719 WO 20180530
- International Announcement: WO2019/229871 WO 20191205
- Main IPC: H01L21/67
- IPC: H01L21/67 ; G06T7/64 ; G01B11/06 ; G01N21/95 ; G01N23/2251 ; G06T7/00 ; H04N5/235

Abstract:
The present disclosure provides a wafer inspection technology that involves less degradation of the image quality even when an object to be observed has a variation in height due to warpage, etc. of a wafer. This wafer inspection apparatus obtains an image with less degradation by: adjusting the focal point of an observation optical system to a height measured by a height sensor for measuring wafer surface heights; and further, correcting a switching signal for a CCD line sensor on the basis of stage position data and optical magnification data corresponding to the height so as to make a correction corresponding to the wafer surface height.
Public/Granted literature
- US20210118710A1 WAFER INSPECTION APPARATUS AND WAFER INSPECTION METHOD Public/Granted day:2021-04-22
Information query
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