Invention Grant
- Patent Title: Method of manufacturing semiconductor device by setting process chamber maintenance enable state
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Application No.: US16802322Application Date: 2020-02-26
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Publication No.: US11342212B2Publication Date: 2022-05-24
- Inventor: Yasuhiro Mizuguchi , Naofumi Ohashi , Tadashi Takasaki , Shun Matsui
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JPJP2019-135109 20190723
- Main IPC: H01L21/677
- IPC: H01L21/677 ; H01L21/67

Abstract:
Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) transferring a substrate from a storage container storing one or more substrates including the substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, and setting the process chamber to a maintenance enable state after the substrate processing is completed by stopping the one or more substrates from being transferred into the process chamber.
Public/Granted literature
- US20210028042A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2021-01-28
Information query
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