Invention Grant
- Patent Title: Semiconductor memory device with improved operation speed
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Application No.: US16700857Application Date: 2019-12-02
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Publication No.: US11342350B2Publication Date: 2022-05-24
- Inventor: Sang Heon Lee , Hyun Heo
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2019-0059056 20190520
- Main IPC: G11C5/06
- IPC: G11C5/06 ; H01L27/11573 ; H01L27/11582 ; H01L27/1157 ; H01L27/11565

Abstract:
A semiconductor memory device is provided. The semiconductor memory device includes a memory cell array disposed on a substrate, a bit line connected to the memory cell array, a peripheral circuit disposed between the memory cell array and the substrate, the peripheral circuit including a transistor, a conductive line disposed between the memory cell array and the transistor, a lower connection structure connecting the conductive line and the transistor, and two or more upper connection structures connecting the bit line and the conductive line, the two or more upper connection structures being spaced apart from each other.
Public/Granted literature
- US20200373319A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-11-26
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