- Patent Title: Metal-insulator-metal structure and methods of fabrication thereof
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Application No.: US16983880Application Date: 2020-08-03
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Publication No.: US11342408B2Publication Date: 2022-05-24
- Inventor: Chih-Fan Huang , Hung-Chao Kao , Yuan-Yang Hsiao , Tsung-Chieh Hsiao , Hsiang-Ku Shen , Hui-Chi Chen , Dian-Hau Chen , Yen-Ming Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/311 ; H01L27/22 ; H01L21/3213 ; H01L21/768 ; H01L23/522
Abstract:
The present disclosure is directed to a method of fabrication a semiconductor structure. The method includes providing a substrate and forming a bottom electrode over the substrate, wherein a terminal end of the bottom electrode has a tapered sidewall. The method also includes depositing an insulating layer over the bottom electrode and forming a top electrode over the insulating layer, wherein a terminal end of the top electrode has a vertical sidewall.
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