Invention Grant
- Patent Title: Semiconductor device having injection enhanced type insulated gate bipolar transistor with trench emitter and method of manufacturing the same
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Application No.: US16702188Application Date: 2019-12-03
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Publication No.: US11342450B2Publication Date: 2022-05-24
- Inventor: Nao Nagata
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-243176 20181226
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/423 ; H01L29/08 ; H01L29/10 ; H01L29/417 ; H01L29/66 ; H01L29/49 ; H01L21/308 ; H01L21/3065
Abstract:
A semiconductor device having an IE-type IGBT structure comprises a stripe-shaped trench gate and a stripe-shaped trench emitter arranged to face the trench gate formed in a semiconductor substrate. The semiconductor device further comprises an N-type emitter layer and a P-type base layer both surrounded by the trench gate and the trench emitter formed in the semiconductor substrate. The semiconductor device also comprises a P-type base contact layer arranged on one side of the trench emitter and formed in the semiconductor substrate. The p-type base contact layer, the emitter layer, and the trench emitter are commonly connected with an emitter electrode. The trench emitter is formed deeper than the trench gate in a thickness direction of the semiconductor substrate.
Public/Granted literature
- US20200212209A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-07-02
Information query
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