Invention Grant
- Patent Title: Wafer annealing method
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Application No.: US16925871Application Date: 2020-07-10
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Publication No.: US11348781B2Publication Date: 2022-05-31
- Inventor: Yingya Shao , Houjen Chu , Binghui Bao
- Applicant: NEXCHIP SEMICONDUCTOR CO., LTD.
- Applicant Address: CN Anhui
- Assignee: NEXCHIP SEMICONDUCTOR CO., LTD.
- Current Assignee: NEXCHIP SEMICONDUCTOR CO., LTD.
- Current Assignee Address: CN Anhui
- Agency: Global IP Services
- Agent Tianhua Gu
- Priority: CN2020103724890.0 20200506
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/225

Abstract:
The present disclosure provides a wafer annealing method, including: preparing a wafer, the wafer includes a plurality of regions concentrically disposed on the wafer; heating the plurality of regions, the heating process includes a plurality of heating stages, each of the heating stages has a different heating rate, temperatures of the plurality of regions vary in each of the heating stages; performing heat preservation on the plurality of regions; and cooling the plurality of regions through blowing nitrogen. The wafer annealing method can improve the electrical uniformity of the wafer.
Public/Granted literature
- US20210351029A1 WAFER ANNEALING METHOD Public/Granted day:2021-11-11
Information query
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