Invention Grant
- Patent Title: Methods of forming integrated circuit devices using cutting tools to expose metallization pads through a cap structure and related cutting devices
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Application No.: US16784912Application Date: 2020-02-07
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Publication No.: US11348798B2Publication Date: 2022-05-31
- Inventor: Robert C. Dry , Brook Hosse
- Applicant: Akoustis, Inc.
- Applicant Address: US NC Huntersville
- Assignee: Akoustis, Inc.
- Current Assignee: Akoustis, Inc.
- Current Assignee Address: US NC Huntersville
- Agency: Stanek Lemon Crouse & Meeks, P.A.
- Main IPC: H01L21/304
- IPC: H01L21/304 ; B28D5/00 ; H03H3/08 ; H01L21/78 ; H03H3/02
Abstract:
A method of fabricating a semiconductor device can include providing an integrated circuit electrically coupled to a metallization pad on a semiconductor wafer, the integrated circuit and the metallization pad covered by a cap structure. A channel can be cut in a portion of the cap structure that covers the metallization pad using a cutting tool having a tip surface and a beveled side surface to expose an upper surface of the metallization pad in the channel extending in a first direction and a conductive material can be deposited in the channel to ohmically contact the upper surface of the metallization pad in the channel.
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