Invention Grant
- Patent Title: Thermal chamber exhaust structure and method
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Application No.: US16519504Application Date: 2019-07-23
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Publication No.: US11348811B2Publication Date: 2022-05-31
- Inventor: Hsien-Chang Hsieh , Chun-Chih Lin , Tah-Te Shih , Wen-Hsong Wu , Chune-Te Yang , Yu-Jen Su
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: F01N13/08
- IPC: F01N13/08 ; H01L21/67 ; F27D17/00 ; F23J13/02

Abstract:
An exhaust structure includes an intake section which includes an inlet, an output section which includes an outlet, and a piping section coupled to the intake section and the output section at a section interface. The piping section includes a first inner diameter from the intake section to the output section, wherein one of the intake section or the output section has a second inner diameter at the section interface. The second inner diameter includes a same value as a value of the first inner diameter. A plurality of smoothing layers are configured to resist turbulence and condensation produced by a flow of one or more gasses in the intake section, the output section, and the piping section.
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