Invention Grant
- Patent Title: Method of manufacturing semiconductor devices with multiple silicide regions
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Application No.: US16527350Application Date: 2019-07-31
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Publication No.: US11348839B2Publication Date: 2022-05-31
- Inventor: Wei-Yip Loh , Yan-Ming Tsai , Hung-Hsu Chen , Chih-Wei Chang , Sheng-Hsuan Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/66 ; H01L29/08 ; H01L27/092 ; H01L29/45 ; H01L21/285 ; H01L21/3065 ; H01L21/762 ; H01L21/3105 ; H01L21/311 ; H01L21/266 ; H01L29/78 ; H01L21/3213
Abstract:
A semiconductor device with multiple silicide regions is provided. In embodiments a first silicide precursor and a second silicide precursor are deposited on a source/drain region. A first silicide with a first phase is formed, and the second silicide precursor is insoluble within the first phase of the first silicide. The first phase of the first silicide is modified to a second phase of the first silicide, and the second silicide precursor being soluble within the second phase of the first silicide. A second silicide is formed with the second silicide precursor and the second phase of the first silicide.
Public/Granted literature
- US20210035868A1 Semiconductor Device and Method of Manufacturing Public/Granted day:2021-02-04
Information query
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