Invention Grant
- Patent Title: Semiconductor apparatus and method for manufacturing same
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Application No.: US16634526Application Date: 2017-11-14
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Publication No.: US11348849B2Publication Date: 2022-05-31
- Inventor: Takeshi Hosomi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2017/040936 WO 20171114
- International Announcement: WO2019/097573 WO 20190523
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L21/52 ; H01L21/56 ; H01L23/06 ; H01L23/522 ; H01L23/00

Abstract:
In a semiconductor apparatus, the apparatus is so arranged as to comprise: a semiconductor device having electrodes and wiring-interconnects on a main surface of a semiconductor chip; a first resin structure member, being placed on a side of the main surface of the semiconductor chip, constituting, in lateral and upward directions of a specific electrode of the semiconductor device, a hollow-body structure between the specific electrode and the first resin structure member; a second resin structure member covering an outer lateral side of the first resin structure member, and having the permittivity smaller than or equal to the permittivity of the first resin structure member; and an insulation film covering an outer lateral side of the second resin structure member, and having moisture permeability lower than that of the second resin structure member.
Public/Granted literature
- US20200176340A1 SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING SAME Public/Granted day:2020-06-04
Information query
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