Invention Grant
- Patent Title: Organic interposer including a dual-layer inductor structure and methods of forming the same
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Application No.: US17097165Application Date: 2020-11-13
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Publication No.: US11348884B1Publication Date: 2022-05-31
- Inventor: Wei-Han Chiang , Ming-Da Cheng , Ching-Ho Cheng , Wei Sen Chang , Hong-Seng Shue , Ching-Wen Hsiao , Chun-Hung Chen
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L23/64
- IPC: H01L23/64 ; H01L49/02 ; H01L23/14 ; H01L23/538 ; H01L21/683 ; H01L21/48 ; H01L23/00

Abstract:
An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.
Public/Granted literature
- US20220157744A1 ORGANIC INTERPOSER INCLUDING A DUAL-LAYER INDUCTOR STRUCTURE AND METHODS OF FORMING THE SAME Public/Granted day:2022-05-19
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