Invention Grant
- Patent Title: Negative capacitance transistor having a multilayer ferroelectric structure or a ferroelectric layer with a gradient doping profile
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Application No.: US16572257Application Date: 2019-09-16
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Publication No.: US11349008B2Publication Date: 2022-05-31
- Inventor: Chi-Hsing Hsu , Sai-Hooi Yeong , Chih-Yu Chang , Ching-Wei Tsai , Kuan-Lun Cheng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/28 ; H01L21/02 ; H01L29/78 ; H01L29/66 ; H01L29/423
Abstract:
A negative capacitance semiconductor device includes a substrate. A dielectric layer is disposed over a portion of the substrate. A ferroelectric structure is disposed over the dielectric layer. Within the ferroelectric structure: a material composition of the ferroelectric structure varies as a function of a height within the ferroelectric structure. A gate electrode is disposed over the ferroelectric structure.
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