Invention Grant
- Patent Title: Semiconductor integrated circuit and imaging device
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Application No.: US16761464Application Date: 2018-09-25
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Publication No.: US11350050B2Publication Date: 2022-05-31
- Inventor: Naohiko Kimizuka
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Chip Law Group
- Priority: JPJP2017-217865 20171113
- International Application: PCT/JP2018/035401 WO 20180925
- International Announcement: WO2019/092999 WO 20190516
- Main IPC: H04N5/374
- IPC: H04N5/374 ; H01L27/146 ; H01L29/73 ; H04N5/3745 ; H01L29/739

Abstract:
In a solid-state imaging element provided with a differential pair of transistors, noise of a signal from the differential pair is reduced. The semiconductor integrated circuit includes a pixel circuit and a pair of TFETs (Tunnel Field Effect Transistors). In the semiconductor integrated circuit, the pixel circuit photoelectrically converts incident light to generate a pixel signal. Further, in the semiconductor integrated circuit, the pair of TFETs amplifies the difference between the pixel signal generated by the pixel circuit and a predetermined reference signal that changes with time, and outputs the amplified difference as a differential amplification signal.
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