Invention Grant
- Patent Title: Atomic layer deposition apparatus and methods of fabricating semiconductor devices using the same
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Application No.: US16590975Application Date: 2019-10-02
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Publication No.: US11352698B2Publication Date: 2022-06-07
- Inventor: Sangyub Ie , Gukhyon Yon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, PC
- Priority: KR10-2019-0048613 20190425,KR10-2019-0083110 20190710
- Main IPC: C23C16/455
- IPC: C23C16/455 ; H01L21/02 ; H01L21/687 ; C23C16/52 ; C23C16/48

Abstract:
An atomic layer deposition (ALD) apparatus includes a light source disposed at an upper portion of a section, a wafer supporting part disposed at a lower portion of the section, and a lens pocket between the light source and the wafer supporting part, and including a frame part and a transparent panel, the lens pocket including a pocket space having sides defined by the frame part and a bottom defined by the transparent panel.
Public/Granted literature
- US20200340115A1 ATOMIC LAYER DEPOSITION APPARATUS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME Public/Granted day:2020-10-29
Information query
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