Invention Grant
- Patent Title: Flow-rate sensor
-
Application No.: US17256908Application Date: 2019-06-20
-
Publication No.: US11353349B2Publication Date: 2022-06-07
- Inventor: Hiroki Nakatsuchi , Yasuo Onose , Takayuki Yogo , Ryotaro Shimada
- Applicant: Hitachi Automotive Systems, Ltd.
- Applicant Address: JP Hitachinaka
- Assignee: Hitachi Automotive Systems, Ltd.
- Current Assignee: Hitachi Automotive Systems, Ltd.
- Current Assignee Address: JP Hitachinaka
- Agency: Crowell & Moring LLP
- Priority: JPJP2018-132464 20180712
- International Application: PCT/JP2019/024467 WO 20190620
- International Announcement: WO2020/012908 WO 20200116
- Main IPC: G01F1/692
- IPC: G01F1/692 ; G01F1/38 ; G01F1/684

Abstract:
A flow-rate sensor is provided with a lead frame, a semiconductor chip that is disposed on one surface of the lead frame, and in which a diaphragm including a void portion on the lead frame side is formed, a flow rate detecting unit that is formed on the one surface including the diaphragm of the semiconductor chip, and resin that includes a flow passage opening portion exposing at least a portion of the flow rate detecting unit formed on the diaphragm, and covers the lead frame and the semiconductor chip. A lower side resin portion of the resin covering another surface side of the lead frame, on an opposite side to the one surface side thereof, has a thinned portion that is thinner than a periphery thereof in a region facing a peripheral edge portion of the diaphragm.
Public/Granted literature
- US20210278263A1 Flow-Rate Sensor Public/Granted day:2021-09-09
Information query