Invention Grant
- Patent Title: Active boundary quilt architecture memory
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Application No.: US17006155Application Date: 2020-08-28
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Publication No.: US11355162B2Publication Date: 2022-06-07
- Inventor: Christophe Vincent Antoine Laurent
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C5/02 ; G11C8/10 ; H01L45/00 ; H01L27/24 ; H01L27/02 ; G11C7/06

Abstract:
Methods, systems, and apparatus that increase available memory or storage using active boundary areas in quilt architecture are described. A memory array may include memory cells overlying each portion of a substrate layer that includes certain types of support circuitry, such as decoders and sense amplifiers. Active boundary portions, which may be elements of the memory array having a different configuration from other portions of the memory array, may be positioned on two sides of the memory array and may increase available data in a quilt architecture memory. The active boundary portions may include support components to access both memory cells of neighboring memory portions and memory cells overlying the active boundary portions. Address scrambling may produce a uniform increase in number of available data in conjunction with the active boundary portions.
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