Invention Grant
- Patent Title: Power supply generator assist
-
Application No.: US17081116Application Date: 2020-10-27
-
Publication No.: US11355173B2Publication Date: 2022-06-07
- Inventor: Yen-An Chang , Po-Hao Lee , Yi-Chun Shih
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Merchant & Gould P.C.
- Main IPC: G11C11/16
- IPC: G11C11/16

Abstract:
The disclosed system and method reduce on-chip power IR drop caused by large write current, to increase the write IO number or improve write throughput and to suppress write voltage ripple at the start and end of a write operation. The disclosed systems and methods are described in relation to stabilizing the bit line voltage for MRAMs, however, the disclosed systems and methods can be used to stabilize the bit line voltage of any memory configuration that draws large currents during short write pulses or, more generally, to selectively assist a power supply generator in supplying adequate power to a load at times of large power consumption.
Public/Granted literature
- US20210201975A1 POWER SUPPLY GENERATOR ASSIST Public/Granted day:2021-07-01
Information query