Techniques related to methods and systems for improving a performance related to reading data stored in memory cells. The method includes selecting a first voltage read range and a second voltage read range from multiple voltage read ranges that are associated with a number of bits storable in a memory cell. The method includes receiving, a first set of parameters that represent a first probability distribution of first candidate voltage read thresholds within the first voltage read range. The method includes receiving a second set of parameters that represent a second probability distribution of second candidate voltage read thresholds within the second voltage read range. The method includes generating, based on an input to an objective function, a voltage read threshold. The method includes reading data stored in the memory cell based on the voltage read threshold.