Invention Grant
- Patent Title: Plasma processing apparatus and control method
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Application No.: US16942158Application Date: 2020-07-29
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Publication No.: US11355326B2Publication Date: 2022-06-07
- Inventor: Taro Ikeda , Mikio Sato , Eiki Kamata
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Fenwick & West LLP
- Priority: JPJP2019-142497 20190801
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
A plasma processing apparatus includes a processing chamber, a conductive annular member, a microwave radiating mechanism and a plasma detector. The processing chamber has a ceiling plate with an opening. The conductive annular member is disposed at the opening while being insulated from the ceiling plate. The microwave radiating mechanism is disposed on the ceiling plate to be coaxial with a center of the conductive annular member and configured to radiate microwaves into the processing chamber. Further, a plasma detector is connected to the conductive annular member and configured to detect a state of generated plasma.
Public/Granted literature
- US20210035788A1 PLASMA PROCESSING APPARATUS AND CONTROL METHOD Public/Granted day:2021-02-04
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