Invention Grant
- Patent Title: Forming nitrogen-containing layers as oxidation blocking layers
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Application No.: US16120677Application Date: 2018-09-04
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Publication No.: US11355339B2Publication Date: 2022-06-07
- Inventor: Wan-Yi Kao , Chung-Chi Ko
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/78 ; H01L29/66 ; H01L21/324 ; H01L21/762
Abstract:
A method includes forming a silicon layer on a wafer, forming an oxide layer in contact with the silicon layer, and, after the oxide layer is formed, annealing the wafer in an environment comprising ammonia (NH3) to form a dielectric barrier layer between, and in contact with, the silicon layer and the oxide layer. The dielectric barrier layer comprises silicon and nitrogen.
Public/Granted literature
- US20200006065A1 Forming Nitrogen-Containing Layers as Oxidation Blocking Layers Public/Granted day:2020-01-02
Information query
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